January 19953
Philips SemiconductorsProduct specification
Quadruple bilateral switches
HEF4066B
gates
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC134)
DC CHARACTERISTICS
T
amb =2 5C
Power dissipation per switchPmax.100mW
For other RATINGS see Family Specifications
V
DD
V
SYMBOL MIN. TYP . MAX. CONDITIONS
ON resistance
5
R
ON
- 350 2500 W E
n at V
DD
10 - 80 245 W V
is =V
SS to V
DD
15 - 60 175 W see Fig.4
ON resistance
5
R
ON
- 115 340 W E
n at V
DD
10 - 50 160 W V
is =V
SS
15 - 40 115 W see Fig.4
ON resistance
5
R
ON
- 120 365 W E
n at V
DD
10 - 65 200 W V
is =V
DD
15 - 50 155 W see Fig.4
‘ D ’ ON resistance5
D R
ON
- 25 -W E
n at V
DD
between any two10-10-WV
is =V
SS to V
DD
channels 15 - 5 -W see Fig.4
OFF state leakage5
I
OZ
--- nA
E
n at V
SS current, any10---nA
channel OFF15--200nA
E
n input voltage5
V
IL
- 2,25 1 V
I
is =1 0m A
see Fig.9
LOW 10 - 4,50 2 V
15 - 6,75 2 V
V
DD
V
SYMBOL T
amb ( c) CONDITIONS
- 40 +25 +85
MAX. MAX. MAX.
Quiescent device5
I
DD
1,0 1,0 7,5 mAV
SS = 0; all valid
current 10 2,0 2,0 15,0 m A input combinations;
15 4,0 4,0 30,0 mAV
I =V
SS or V
DD
Input leakage current at E
n 15 – I
IN - 300 1000 nA E
n at V
SS or V
DD

January 19954
Philips SemiconductorsProduct specification
Quadruple bilateral switches
HEF4066B
gates
NOTE
To avoid drawing V
DD current out of terminal Z, when switch current flows into terminals Y, the voltage drop across the
bidirectional switch must not exceed 0,4 V. If the switch current flows into terminal Z, no V
DD current will flow out of
terminals Y, in this case there is no limit for the voltage drop across the switch, but the voltages at Y and Z may not
exceed V
DD or V
SS .
Fig.4 Test set-up for measuring R
ON .
Fig.5 Typical R
ON as a function of input voltage.
E n at VDD
I is = 200 m A
V SS =0V